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| CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET Spec. No. : C418J3-E Issued Date : 2009.02.10 Revised Date : Page No. : 1/7 MEN9973J3 Features * VDS=60V RDS(ON)=80m(max.)@VGS=10V, ID=9A RDS(ON)=100m(max.)@VGS=5V, ID=6A * Low Gate Charge * Simple Drive Requirement BVDSS ID RDSON 60V 12A 100m * Repetitive Avalanche Rated * Fast Switching Characteristic * RoHS compliant package Symbol MEN9973J3 Outline TO-252 GGate DDrain SSource GDS Absolute Maximum Ratings (Ta=25C) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=10V, TC=25C Continuous Drain Current @VGS=10V, TC=100C Pulsed Drain Current Avalanche Current Avalanche Energy @ L=0.1mH, ID=12A, RG=25 Repetitive Avalanche Energy @ L=0.05mH Total Power Dissipation (TC=25) Linear Derating Factor Operating Junction and Storage Temperature Note : *1. Pulse width limited by maximum junction temperature *2. Duty Cycle 1% MEN9973J3 VDS VGS ID ID IDM IAS EAS EAR Pd Tj, Tstg 60 20 12 8 30 *1 12 7.2 3.6 *2 20 0.22 -55~+175 V V A A A A mJ mJ W W/C C CYStek Product Specification CYStech Electronics Corp. Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Spec. No. : C418J3-E Issued Date : 2009.02.10 Revised Date : Page No. : 2/7 Value 7.5 80 Unit C/W C/W Characteristics (Tj=25C, unless otherwise specified) Symbol Static BVDSS BVDSS/Tj VGS(th) GFS IGSS IDSS Min. 60 1.0 12 Typ. 0.05 2.0 19 11 2.2 2.4 10 7.5 18 6 913 65 53 2.5 15 8 Max. 3.2 100 1 25 80 100 12 48 1.3 Unit V V/C V S nA A A A m m Test Conditions VGS=0, ID=250A Reference to 25C, ID=1mA VDS = VGS, ID=250A VDS =5V, ID=10A VGS=20 VDS =48V, VGS =0 VDS =40V, VGS =0, Tj=150C VDS =10V, VGS=10V VGS =10V, ID=9A VGS =5V, ID=6A *ID(ON) *RDS(ON) *RDS(ON) Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Rg Source-Drain Diode *IS *ISM *VSD *trr *Qrr - nC ID=10A, VDS=20V, VGS=10V VDS=20V, ID=1A, VGS=10V, RG=6, RD=20 ns pF A V ns nC VGS=0V, VDS=20V, f=1MHz VGS=15mV, VDS=0V, f=1MHz IS=12A, VGS=0V IS=5A, VGS=0, dI/dt=100A/s *Pulse Test : Pulse Width 300s, Duty Cycle2% Ordering Information Device MEN9973J3 MEN9973J3 Package TO-252 (RoHS compliant) Shipping 2500 pcs / Tape & Reel Marking 9973 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves 30 On-Region Characteristics VGS = 10V 7V 6V 5V 4.5V Spec. No. : C418J3-E Issued Date : 2009.02.10 Revised Date : Page No. : 3/7 On-Resistance Variation with Drain Current and Gate Voltage 1.8 V GS= 4.0 V RDS(ON) -Normalized Drain-S ource On-Resistance 1.6 4.5 V 5.0 V 6.0 V 7.0 V 1.0 0.8 0 6 12 18 ID - Drain Current( A ) 24 30 10 V 24 ID - Drain Current( A ) 18 1.4 12 4V 1.2 6 0 0 1 2 V - Drain-S ource Voltage( V ) DS 3 4 2.2 2.0 RDS(on) - Normalized Drain-Source On-Resistance 1.8 On-Resistance Variation with Temperature I D = 10A VGS = 10V On-Resistance Variation with Gate-to-S ource Voltage 0.14 0.12 RDS(ON) - On-Resistance( ) 0.10 0.08 0.06 0.04 0.02 TA = 25 C TA = 125 C ID = 5 A 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 75 100 0 25 50 TJ - Junction Temperature (C) 125 150 175 0 2 4 6 V - Gate-S ource Voltage( V ) GS 8 10 Transfer Characteristics 20 VDS = 5V 16 ID - Drain Current( A ) TA = -55C 125C 12 25C Body Diode Forward Voltage Variation with S ource Current and Temperature 100 VGS = 0V Is - Reverse Drain Current( A ) 10 1 0.1 0.01 0.001 0.0001 T A= 125C 25 C -55 C 8 4 0 1 4 2 3 V - Gate-S ource Voltage( V ) GS 5 6 0 0.6 0.2 0.4 0.8 VSD - Body Diode Forward Voltage( V ) 1.0 1.2 MEN9973J3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves(Cont.) 10 ID = 10A VGS - Gate-to-S ource Voltage(V) 8 VDS = 15V 30V Capacitance(pF) Spec. No. : C418J3-E Issued Date : 2009.02.10 Revised Date : Page No. : 4/7 Gate C harge Characteristics 1500 1350 1200 1050 900 750 600 450 300 150 Capacitance Characteristics f = 1MHz VGS = 0 V Ciss 6 4 2 0 0 2 4 6 8 Q g - Gate Charge( nC) 10 12 14 Coss Crss 0 10 20 30 VDS - Drain-S ource Voltage( V ) 40 50 60 0 Maximum S Operating Area afe 80 50 100s RDS(ON) Limit 50 S ingle Pulse Maximum Power Dissipation S ingle Pulse R = 7.5 C/ W JC TA = 25C ID - Drain Current( A ) 1ms 10ms 100ms 1s 10s DC P( pk ),Peak Transient Power( W ) 40 30 10 20 1 0 0 V = 10V GS S ingle Pulse RJC = 7.5C W / T = 25C C 10 0 0.001 1 10 VDS - Drain-S ource Voltage( V ) 60 0.01 1 0.1 t 1 ,Time ( sec ) 10 100 1000 Transient Thermal Response Curve 1 Duty Cycle = 0.5 0.2 r(t),Normalized Effective Transient Thermal Resistance 0.1 0.1 0.05 0.02 0.01 Notes: PDM t1 t2 0.01 Single Pulse 1.Duty Cycle,D = 2.R =7.5 C/ W JC t1 t2 3.T - TC = P * R (t) JC J 4.R (t)=r(t) * R JC JC 0.001 10 -4 10 -3 10 -2 10 t 1 ,Time (sec) -1 1 10 100 1000 MEN9973J3 CYStek Product Specification CYStech Electronics Corp. Reel Dimension Spec. No. : C418J3-E Issued Date : 2009.02.10 Revised Date : Page No. : 5/7 Carrier Tape Dimension MEN9973J3 CYStek Product Specification CYStech Electronics Corp. Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 C Spec. No. : C418J3-E Issued Date : 2009.02.10 Revised Date : Page No. : 6/7 Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Average ramp-up rate 3C/second max. (Tsmax to Tp) Preheat 100C -Temperature Min(TS min) -Temperature Max(TS max) 150C -Time(ts min to ts max) 60-120 seconds Time maintained above: -Temperature (TL) 183C - Time (tL) 60-150 seconds Peak Temperature(TP) 240 +0/-5 C Time within 5C of actual peak 10-30 seconds temperature(tp) Ramp down rate 6C/second max. 6 minutes max. Time 25 C to peak temperature MEN9973J3 Pb-free Assembly 3C/second max. 150C 200C 60-180 seconds 217C 60-150 seconds 260 +0/-5 C 20-40 seconds 6C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. CYStek Product Specification CYStech Electronics Corp. TO-252 Dimension A C Spec. No. : C418J3-E Issued Date : 2009.02.10 Revised Date : Page No. : 7/7 Marking: B L F G D Device Name Date code 9973 3 H E K 2 I 1 J Style: Pin 1.Gate 2.Drain 3.Source 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 *: Typical DIM A B C D E F Inches Min. Max. 0.0177 0.0217 0.0650 0.0768 0.0354 0.0591 0.0177 0.0236 0.2441 0.2677 0.2125 0.2283 Millimeters Min. Max. 0.45 0.55 1.65 1.95 0.90 1.50 0.45 0.60 6.20 6.80 5.40 5.80 DIM G H I J K L Inches Min. Max. 0.0866 0.1102 *0.0906 0.0449 0.0346 0.2047 0.2165 0.0551 0.0630 Millimeters Min. Max. 2.20 2.80 *2.30 1.14 0.88 5.20 5.50 1.40 1.60 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: * Lead : KFC; pure tin plated * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MEN9973J3 CYStek Product Specification |
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